Long-Wavelength Luminescence of InSb Quantum Dots in Type II Broken-Gap Heterostructure

The features of the electroluminescence spectra narrow-gap type II InAs/InSb/InAs heterostructures containing a single layer InSb quantum dots placed into p-n-InAs junction were studied. luminescent properties under forward and reverse bias in temperature range 77–300 K investigated as function surface density nano-objects buried matrix. When applying to study, suppression negative interband luminescence dominance interface recombination transitions at InSb/InAs heterojunction observed room temperature. radiation, which corresponded involving localized electron-hole states dots, was revealed recorded low temperatures.